掺杂Ba（Zr0.15Ti0.85）O3陶瓷的结构与电性能研究

doi:10.19964/j.issn.1006-4990.2023-0552

Abstract

Abstract:

Ba（Zr_0.15Ti_0.85）O₃（BZT） ceramics with different doping amounts of holmium oxide were prepared by solid⁃state sintering method，the phase composition，microstructure，dielectric properties，and ferroelectric properties of undoped and holmium oxide doped BZT ceramics were compared and analyzed.The results indicated that BZT ceramics with undoped or low doping amounts of holmium oxide（≤2%） mainly existed in the form of single⁃phase solid solutions.When the doping amount of holmium oxide was increased to 3% or more，new Ho₂Ti₂O₇ phases were formed in the doped BZT ceramics.The grain size of holmium oxide doped BZT ceramics was significantly smaller than that of undoped BZT ceramics，and as the doping amount of holmium oxide increased，the average grain size of doped BZT ceramics was gradually decreased.As the doping amount of holmium oxide increased，the performance of BZT ceramics ε_rRTand tan δ_RT was increased firstly and then decreased.When the mass fraction of holmium oxide was 2%，BZT ceramics with high ε_rRTand low tan δ_RT could be obtained.Doped BZT ceramics exhibited the characteristics of relaxor ferroelectric ceramics，the residual polarization intensity of doped BZT ceramics with 2%~7% holmium oxide doping was lower than that of undoped BZT ceramics，and the residual polarization intensity was gradually decreased with the increase of doping amount.The coercive electric field of doped BZT ceramics was smaller than that of undoped BZT ceramics，and the coercive electric field of doped BZT ceramics was gradually decreased with the increase of doping amount.The changes in residual polarization intensity and coercive electric field were mainly related to the internal phase transition and grain size of BZT ceramics.

Key words: Ba（Zr_0.15Ti_0.85）O₃ ceramic, doping with holmium oxide, structure, relaxation ferroelectricity, dielectric performance

CLC Number:

TQ174.1

XIONG Cailian, SUN Guobin, LI Heng, XING Feng. Study on structure and electrical properties of Ba（Zr_0.15Ti_0.85）O₃doped ceramics[J]. Inorganic Chemicals Industry, 2024, 56(8): 60-66.

Figures/Tables 8

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Table 1

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Table 2

Fig.6

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w（氧化钬）/ %	平均晶粒尺寸/µm	w（氧化钬）/ %	平均晶粒尺寸/µm
0	34.33	4	4.08
1	16.67	5	3.52
2	14.14	6	2.78
3	5.38	7	2.70

w（氧化钬）/%	介电常数最大值	居里温度/℃	半峰宽/ ℃	介电常数变化率/% （-30 ℃~+85 ℃）
0	6 981.53	76.0	52.0	+344~-62
1	8 404.60	54.2	68.0	+89~-80
2	9 990.59	4.2	98.2	+16~-81
3	9 774.94	-2.0	109.2	+20~-81
4	8 847.49	-20.0	124.2	+49~-77
5	6 984.56	-42.2	132.0	+82~-70
6	5 894.35	-55.2	146.0	+87~-65
7	4 169.89	-65.0	170.0	+77~-59

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Study on structure and electrical properties of Ba（Zr_0.15Ti_0.85）O₃doped ceramics

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Study on structure and electrical properties of Ba（Zr0.15Ti0.85）O3 doped ceramics