掺杂型金属氧化物半导体材料的研究进展

doi:10.11962/1006-4990.2020-0274

Abstract

Abstract:

Metal oxides are a class of ionic compounds composed of metal cations and oxygen anions.The metal positive ions and oxygen negative ions are arranged into various crystal structures by ion bonding, showing unique physical properties.However, metal oxides are limited in potential application by their wide band gaps, low photon quantum yields and photoelectric conversion efficiencies, high probability of recombination of photo-generated electrons and holes, low gas response speed and negative effects of valence band and conduction band on the electron transfer performance.The research progress of several typical doped metal oxides, such as zinc oxide, titanium dioxide, iron oxide and rare earth oxides is reviewed.The effects of metal doping on the optical, electrical, magnetic and sensing properties of these typical metal oxides is analyzed and their potential application fields and research status are introduced.The future development direction and topics needing attention are put forward.

Key words: metal oxide, doping, photoelectric performance, magnetic performance, sensing performance

CLC Number:

TN304.21

Wang Yongqin,Huang Yangze,Fu Yu. Research progress of doped metal oxide semiconductor materials[J]. Inorganic Chemicals Industry, 2021, 53(4): 1-7.

Figures/Tables 4

References 39

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Research progress of doped metal oxide semiconductor materials

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