金属氧化物半导体基三乙胺传感器研究进展

doi:10.19964/j.issn.1006-4990.2020-0709

Abstract

Abstract:

Triethylamine is a widely used volatile organic compound with toxic and side effects on human body,which needs long-term and effective monitoring.The development of stable,safe and reliable triethylamine gas sensor to realize the real-time detection of triethylamine gas concentration in the environment is very important for the safe storage,transportation and use of triethylamine.Metal oxide semiconductor based gas sensor has the advantages of simple preparation,low price and high response value.It plays an irreplaceable role in the detection of triethylamine gas.The latest research progress of triethylamine sensor based on metal oxide semiconductor was introduced.The recent research results on the preparation and properties of metal oxide semiconductor based triethylamine gas sensing materials,including doping,heterojunction,organic metal skele-ton and redox grapheme were reviewed.The mechanism of gas sensing properties of metal oxide semiconductor matrix compo-sites to triethylamine was discussed.And the future research direction of metal oxide-based triethylamine gassensitive materi-als was prospected.

Key words: metal oxide semiconductor, triethylamine, nanomaterials, gas sensors

CLC Number:

TP212.2

ZHANG Jingyi,HARI Bala,ZHANG Zhanying. Research progress on metal oxide semiconductor based triethylamine gas sensors[J]. Inorganic Chemicals Industry, 2021, 53(12): 67-73.

Figures/Tables 4

Table 1

Fig.1

Fig.2

Fig. 3

References 39

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敏感材料	制备方法	灵敏度	工作温度/℃	气体体积分数/10^-6	响应和恢复时间/s	文献年份/年
NiO/SnO₂	水热法	48.6^①	220	10	11/34	2015^[3]
SnO₂	水热法	70^①	160	100	5/13^*	2013^[15]
Au-ZnO/SnO₂	水热法、浸渍法	12.4^①	40	50	1.2/70^*	2015^[6]
SnO₂-OVs	冰水浴搅拌	2 701.36^①	260	500	146/173	2019^[9]
SnO₂	热蒸发	3.1^①	200	100	4/20	2020^[16]
CeO₂/SnO₂	水热法	252.2^①	310	200	98^/76^	2018^#[17]
Ho-SnO₂	气相-液相化学沉积	12^①	175	50	2/120	2020^[18]
Rh-SnO₂	水热法	607.23^①	325	100	49/24	2020^[19]
ZnO	水热法	51.6^①	280	50	8/23	2017^[20]
ZnO	水热法	360^①	270	100	5^/60^	2019^{# [21]}
Cu-Fe₂O₃	水热法	32^①	240	100	2^/6^	2021^[22]
ZnO/ZnFe₂O₄-MOF	共沉淀法	7.6^①	170	100	1/9	2019^[23]
α-Fe₂O₃	共沉淀法	11.8^①	275	100	70^/65^	2016^{# [24]}
α-Fe₂O₃/rGO-MOF	水热法	33.43^①	280	100	2/7	2020^[25]
WO₃	水热法	32.5^①	250	20	50/32^*	2020^[26]
WO₃-SnO₂	溶剂热法	87^①	220	50	6/7	2016^[27]
In₂O₃	溶剂热法	220^①	120	5	9/36	2021^[28]
Pd-In₂O₃	水热法	189^①	220	50	4/17	2019^[29]
Au-In₂O₃	水热法	15^①	280	5	11/14	2019^[30]
MOF	化学合成法	450^①	220	500	33/1120	2020^[31]
rGO-LaFeO₃	水热法	4^①	240	1	3/10	2020^[32]
Co₃O₄/rGO	水热法	25^①	210	100	30/32	2019^[33]
rGO/DF-PDI	化学合成法	13.7%^②	25	100	64/128	2020^[34]
ZnO/ZnCo₂O₄	水热法	5.1^①	220	100	8/65	2019^#[7]
Au/Co₃O₄	沉淀法	18^①	210	100	94/100	2019^#[35]
ZnCo₂O₄	沉淀法	14^①	200	100	7/57	2018^#[36]

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Research progress on metal oxide semiconductor based triethylamine gas sensors

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