Bi2WO6光催化剂改性研究进展

doi:10.19964/j.issn.1006-4990.2025-0132

Abstract

Abstract:

With the intensification of human industrial activities，wastewater discharge from multiple sectors，including chemical manufacturing，pharmaceuticals，textile dyeing，and electroplating，has become a critical challenge requiring urgent resolution in environmental governance.Photocatalytic technology offers an effective approach for removing organic pollutants from water bodies.Bi₂WO₆ is a photocatalyst responsive to visible light（bandgap 2.7 eV），featuring a two-dimensional olivine-type oxide semiconductor structure composed of alternating［Bi₂O₂］²⁺ and ［WO₄］^2- octahedral layers.This material exhibits chemical stability and can degrade organic pollutants under sunlight-driven conditions.However，its overall photocatalytic performance is constrained by limitations such as restricted adsorption capacity and reactive oxygen species generation，high recombination rates of photo-generated carriers，and a narrow visible light response range（λ≤460 nm）.Numerous researchers have addressed these limitations through various modification strategies，including morphological control，defect engineering，elemental doping，heterostructure construction，and metal particle deposition.The several modification methods and mechanisms for Bi₂WO₆ materials were summarized，relevant research progress were systematically organized，and future research directions were proposed to overcome existing limitations.It was aimed to provide theoretical guidance for the design and modification of bismuth-based photocatalytic materials.

Key words: Bi₂WO₆, modification, mechanism, photocatalytic application

CLC Number:

TQ135.32

MA Liang, WANG Chunyan, LIU Haining, LI Mingzhen, SONG Zhongmei, ZHANG Siyuan, YE Xiushen. Research progress on Bi₂WO₆-based photocatalyst modification[J]. Inorganic Chemicals Industry, 2025, 57(12): 1-7.

Figures/Tables 5

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Table 1

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References 42

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分类标准	名称	组分半导体的特点	异质结的特点
组分半导体的能带结构	Ⅰ型异质结（跨间隙型）	B₁CB高于B₂CB，B₁VB低于B₂VB	光照时系统内的电子和空穴均聚集到半导体B₂上，能级上可实现电子的分级跃迁，减小材料E_g，但无法促进光生载流子的分离
	Ⅱ型异质结（间隙交错型）	B₁CB、B₁VB均高于B₂CB、B₂VB	光照后，光生电子从半导体B₁的CB 能级迁移到半导体B₂的CB能级上，而光生空穴则从半导体B₂的VB能级迁移到半导体B₁的VB能级上，有利于光生载流子的分离
	Ⅲ型异质结（间隙断裂型）	B₁VB高于B₂CB	组分半导体间的带隙互不重叠，光生载流子不在组分半导体间发生迁移
光生载流子的流动机理	载流子单向流动异质结	B₂无法被光激发，载流子单向流动	仅在B₂的CB上聚集e^-
光生载流子的流动机理	载流子双向流动异质结	B₁、B₂均能被光激发，载流子双向流动	B₁VB上聚集h⁺，B₂CB上聚集e^-
有无载流子复合介质层	有载流子复合介质层的S型异质结	B₁、B₂均能被光激发，载流子双向流动	较弱氧化能力的h⁺和较弱还原能力的e^-在电子介质层复合
有无载流子复合介质层	无载流子复合介质层的Z型异质结	B₁、B₂均能被光激发，载流子双向流动	较弱氧化能力的h⁺和较弱还原能力的e^-直接复合

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Research progress on Bi₂WO₆-based photocatalyst modification

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Research progress on Bi2WO6-based photocatalyst modification