金属氧化物半导体基三乙胺传感器研究进展

doi:10.19964/j.issn.1006-4990.2020-0709

摘要/Abstract

摘要：

三乙胺是一种应用广泛但对人体有毒副作用的挥发性有机物,需要长期有效的监测,开发一种性能稳定、安全可靠的三乙胺气敏传感器,实现对环境中三乙胺气体浓度实时检测,对于三乙胺的安全储存、运输和使用等环节是至关重要的。金属氧化物半导体基气敏传感器具有制备简单、价格低廉、响应值高等优点,在三乙胺气体的检测中具有不可替代的作用。重点介绍了基于金属氧化物半导体的三乙胺传感器最新研究进展。综述了近年来包括掺杂、异质结、有机金属骨架和氧化还原石墨烯在内的关于金属氧化物半导体基三乙胺气敏材料的制备和性能等方面的研究成果。论述了金属氧化物半导体基复合材料对三乙胺气敏性能的机理。展望了金属氧化物基三乙胺气敏材料的未来研究方向。

关键词: 金属氧化物半导体, 三乙胺, 纳米材料, 气体传感器

Abstract:

Triethylamine is a widely used volatile organic compound with toxic and side effects on human body,which needs long-term and effective monitoring.The development of stable,safe and reliable triethylamine gas sensor to realize the real-time detection of triethylamine gas concentration in the environment is very important for the safe storage,transportation and use of triethylamine.Metal oxide semiconductor based gas sensor has the advantages of simple preparation,low price and high response value.It plays an irreplaceable role in the detection of triethylamine gas.The latest research progress of triethylamine sensor based on metal oxide semiconductor was introduced.The recent research results on the preparation and properties of metal oxide semiconductor based triethylamine gas sensing materials,including doping,heterojunction,organic metal skele-ton and redox grapheme were reviewed.The mechanism of gas sensing properties of metal oxide semiconductor matrix compo-sites to triethylamine was discussed.And the future research direction of metal oxide-based triethylamine gassensitive materi-als was prospected.

Key words: metal oxide semiconductor, triethylamine, nanomaterials, gas sensors

中图分类号:

TP212.2

张静宜,孟哈日巴拉,张战营. 金属氧化物半导体基三乙胺传感器研究进展[J]. 无机盐工业, 2021, 53(12): 67-73.

ZHANG Jingyi,HARI Bala,ZHANG Zhanying. Research progress on metal oxide semiconductor based triethylamine gas sensors[J]. Inorganic Chemicals Industry, 2021, 53(12): 67-73.

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敏感材料	制备方法	灵敏度	工作温度/℃	气体体积分数/10^-6	响应和恢复时间/s	文献年份/年
NiO/SnO₂	水热法	48.6^①	220	10	11/34	2015^[3]
SnO₂	水热法	70^①	160	100	5/13^*	2013^[15]
Au-ZnO/SnO₂	水热法、浸渍法	12.4^①	40	50	1.2/70^*	2015^[6]
SnO₂-OVs	冰水浴搅拌	2 701.36^①	260	500	146/173	2019^[9]
SnO₂	热蒸发	3.1^①	200	100	4/20	2020^[16]
CeO₂/SnO₂	水热法	252.2^①	310	200	98^/76^	2018^#[17]
Ho-SnO₂	气相-液相化学沉积	12^①	175	50	2/120	2020^[18]
Rh-SnO₂	水热法	607.23^①	325	100	49/24	2020^[19]
ZnO	水热法	51.6^①	280	50	8/23	2017^[20]
ZnO	水热法	360^①	270	100	5^/60^	2019^{# [21]}
Cu-Fe₂O₃	水热法	32^①	240	100	2^/6^	2021^[22]
ZnO/ZnFe₂O₄-MOF	共沉淀法	7.6^①	170	100	1/9	2019^[23]
α-Fe₂O₃	共沉淀法	11.8^①	275	100	70^/65^	2016^{# [24]}
α-Fe₂O₃/rGO-MOF	水热法	33.43^①	280	100	2/7	2020^[25]
WO₃	水热法	32.5^①	250	20	50/32^*	2020^[26]
WO₃-SnO₂	溶剂热法	87^①	220	50	6/7	2016^[27]
In₂O₃	溶剂热法	220^①	120	5	9/36	2021^[28]
Pd-In₂O₃	水热法	189^①	220	50	4/17	2019^[29]
Au-In₂O₃	水热法	15^①	280	5	11/14	2019^[30]
MOF	化学合成法	450^①	220	500	33/1120	2020^[31]
rGO-LaFeO₃	水热法	4^①	240	1	3/10	2020^[32]
Co₃O₄/rGO	水热法	25^①	210	100	30/32	2019^[33]
rGO/DF-PDI	化学合成法	13.7%^②	25	100	64/128	2020^[34]
ZnO/ZnCo₂O₄	水热法	5.1^①	220	100	8/65	2019^#[7]
Au/Co₃O₄	沉淀法	18^①	210	100	94/100	2019^#[35]
ZnCo₂O₄	沉淀法	14^①	200	100	7/57	2018^#[36]

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