Abstract: BiFeO₃ film was prepared on Pt/Ti/SiO₂/Si substrate by sol-gel method，framing the Pt/BiFeO₃/Pt capacitor.The mi- crostructure and ferroelectric properties of the films prepared by different annealing temperatures and holding times were studied.X ray diffraction（XRD） results showed that different annealing temperatures and holding times did not change the BiFeO₃（BFO） bulk perovskite structure，but the change of temperature will produce different crystal phases.By scanning electron microscopy（FE-SEM），it could be observed that the grain size had a decrease trend with the increase of the sintering holding time.P-E curves showed that BFO film was easy to breakdown when the applied electric field was high，and it was  difficult to get a clear saturated hysteresis loop.

Key words: bismuth ferrite thin film, annealing temperature, holding time, microstructure, ferroelectric properties