铌酸锂晶体铁电畴调控及器件应用研究进展
收稿日期: 2023-09-28
网络出版日期: 2024-06-20
基金资助
国家自然科学基金重点项目(51832007);国家自然科学基金国际(地区)合作与交流项目(52220105010);国家自然科学基金中德科学中心2021年度中德合作交流项目(M-0755);山东省自然科学基金重大基础研究项目(ZR2020ZD35);山东省产业技术研究院研发项目(Z1250020005);山东大学齐鲁青年学者项目
Research progress of preparation and device application of lithium niobate crystal ferroelectric domain
Received date: 2023-09-28
Online published: 2024-06-20
铌酸锂是一种多功能晶体,具有压电、铁电、热释电、电光、声光、光弹、非线性等物理性质。随着铌酸锂铁电畴工程的不断进步和铌酸锂单晶薄膜技术的发展,铌酸锂的诸多优异性能已被开发出来,广泛应用于光波导、电光调制器、非线性光学、量子器件等领域,未来在光子学方面的广泛应用可能形成“铌酸锂谷”时代。着重介绍了铌酸锂的畴反转方法、生长机制、畴结构表征手段、铁电畴工程的应用,以及铌酸锂薄膜器件如光波导、电光器件、量子器件的最新研究进展。伴随着铌酸锂从“体块”走向“薄膜”,结合微加工技术使铌酸锂的应用领域从独立器件向小型多器件集成芯片转变,铌酸锂铁电畴工程在构建小型全集成芯片过程中将具有更重要的作用。
陈宇能 , 陈昆峰 , 薛冬峰 . 铌酸锂晶体铁电畴调控及器件应用研究进展[J]. 无机盐工业, 2024 , 56(6) : 1 -13 . DOI: 10.19964/j.issn.1006-4990.2023-0473
Lithium niobate is a multifunctional crystal with physical properties such as piezoelectric,ferroelectric,pyroelectric,electro-optical,acousto-optical,photoelastic,nonlinear and so on.With the continuous progress of lithium niobate iron domain engineering and the development of lithium niobate single crystal thin film technology,more excellent properties of lithium niobate have been developed,which are widely used in optical waveguides,electro-optical modulators,nonlinear optics,quantum devices and other fields.Future widespread applications in photonics may form the era of “lithium niobate valley”.The domain inversion method,growth mechanism,domain structure characterization method,application of ferroelectric domain engineering,and the latest research progress of lithium niobate thin-film devices such as optical waveguides,electro-optical devices,and quantum devices were emphatically introduced.With the transformation of lithium niobate from “bulk” to "thin film",combined with micromachining technology,the application field of lithium niobate changed from independent devices to small multi-device integrated chips,and lithium ferroelectric domain engineering of lithium niobate would play a more important role in the process of building small fully integrated chips.
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