锡掺杂溴铅铯钙钛矿纳米晶的合成、结构及发光性能
收稿日期: 2022-08-26
网络出版日期: 2023-06-14
基金资助
国家自然科学基金(11904140);江苏省自然科学基金(bk2020997)
Synthesis,structure and luminescent performance of Sn2+-doped CsPbBr3 perovskite nanocrystals
Received date: 2022-08-26
Online published: 2023-06-14
为了降低CsPbBr3钙钛矿纳米晶的Pb2+毒性,同时优化Sn2+掺杂CsPbBr3纳米晶的发光性能,采用热注入法合成了Sn2+掺杂的CsPb1-x Sn x Br3纳米晶(x=0.1、0.2、0.3、0.4和0.5),使用X射线衍射仪(XRD)、透射电子显微镜(TEM)、X射线光电子能谱(XPS)和荧光光谱仪(PL)对所合成纳米晶的物相结构、微观形貌及发光性能进行表征。结果表明,纳米晶中掺杂的Sn元素以Sn2+和Sn4+形式存在,且含有Pb2+阳离子空位,当x=0.3时,Sn元素实际掺杂物质的量分数高达43.91%。x=0.1~0.4时,纳米晶为纯单斜相钙钛矿结构,尺寸约16~20 nm,立方块形貌较均匀。Sn2+掺杂调控了CsPb1-x Sn x Br3纳米晶的光谱性能,当x=0.3时,CsPb0.7Sn0.3Br3纳米晶荧光发射峰位于523 nm,半峰宽最窄达15 nm,荧光寿命长达86.3 ns,荧光强度最强,是一种具有应用潜力的绿光半导体材料。
关键词: Sn2+掺杂; CsPb1-x Sn x Br3纳米晶; 单斜相钙钛矿; 发光性能
肖勇 , 贾雅梅 , 关登 , 周超洋 , 汪晓勇 , 彭红兵 , 崔祥水 , 徐玉松 . 锡掺杂溴铅铯钙钛矿纳米晶的合成、结构及发光性能[J]. 无机盐工业, 2023 , 55(6) : 63 -69 . DOI: 10.19964/j.issn.1006-4990.2022-0531
In order to reduce the Pb2+ toxicity of CsPbBr3 perovskite nanocrystals and optimize the luminescent performance of Sn2-doped CsPbBr3 nanocrystals,Sn2+-doped CsPb1-x Sn x Br3 nanocrystals(x=0.1,0.2,0.3,0.4 and 0.5) were synthesized by hot-injection method. The phase structure,microstructure and luminescent performance of the synthesized nanocrystals were characterized by X-ray diffractometer(XRD),transmission electron microscope(TEM),X-ray photoelectron spectroscopy(XPS),and photoluminescence spectrometer(PL).The results showed that CsPb1-x Sn x Br3 nanocrystals existed in the form of Sn2+ and Sn4+ ions,and contained Pb2+ cation vacancies. When x=0.3,the actual molar doping concentration of Sn element was as high as 43.91%. When x=0.1~0.4,the nanocrystals structure was pure monoclinic perovskite,the size was about 16~20 nm,and the square shape was uniform.The spectral properties of CsPb1-x Sn x Br3 nanocrystals were regulated by Sn2+-doped. When x=0.3,the fluorescence emission peak of CsPb1-x Sn x Br3 nanocrystals was located at 523 nm,the full width at half maxima(FWHM) was 15 nm,the fluorescence lifetime was as long as 86.3 ns,and the fluorescence intensity was the strongest,which were a kind of excellent green-light emitted semiconductor materials with potential application.
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