采用电化学沉积法在FTO玻璃上制备了具有纳米多孔网状结构的氧化铜/钒酸铋薄膜。利用X射线衍射（XRD）、拉曼光谱（Raman）、扫描电子显微镜（SEM）、能谱分析（EDS）对薄膜做成分及结构分析,采用线性伏安扫描（LSV）、频率阻抗测试（EIS）对薄膜做光电性能测试。氧化铜的掺入能够提高钒酸铋薄膜的光电性能,在1.23 Vvs.RHE时,40 mmol/L 氧化铜/钒酸铋薄膜的光电流密度为1.39 mA/cm²,比纯钒酸铋薄膜的光电流密度（0.7 mA/cm²）增大了1倍左右。结果表明,纳米多孔的网状结构,提高了薄膜对光的利用效率,同时也增加了薄膜和电解液的接触面积。氧化铜和钒酸铋复合形成异质结后,抑制了光生电子-空穴对的复合,从而提高了氧化铜/钒酸铋薄膜的光电流密度。

CuO/BiVO₄ thin films with nanoporous network structure were prepared on FTO glass by electrochemical deposition.X-ray diffraction（XRD）,Raman spectroscopy（Raman）,scanning electron microscopy（SEM） and energy spectrum analysis（EDS） were used to analyze the composition and structure of the film,and linear voltammetric scanning（LSV） and frequency impedance test（EIS） were used to test the photoelectric properties of the film.The doping of CuO could improve the photoelectric properties of BiVO₄ thin films.The photocurrent density of 40 mmol/L CuO/BiVO₄ film was 1.39 mA/cm² at 1.23 Vvs.RHE,which was about twice as high as that of pure BiVO₄ film（0.7mA/cm²）.The results showed that the nanoporous network structure improved the light utilization efficiency of the film,and also increased the contact area between the film and electrolyte.The photocurrent density of CuO/BiVO₄ thin films was increased by inhibiting the recombination of photogenerated electron-hole pairs after the formation of heterojunction between CuO and BiVO₄.