Research progress

Study on synthesis of rare earth-doped CeO2 and its CMP properties

  • YUAN Shuai ,
  • FANG Yangfei ,
  • YANG Xiangguang ,
  • ZHANG Yibo
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  • 1.University of Science and Technology of China,Hefei 230026,China
    2.Ganjiang Institute of Innovation,Chinese Academy of Sciences,Ganzhou 341100,China

Received date: 2024-03-23

  Online published: 2024-05-21

Abstract

CeO2 is a commonly used rare earth polishing powder with excellent polishing performance.However,in its polishing research,balancing material removal rate(MRR) and surface roughness(Ra) has always been a key and difficult point.To explore this issue,the solvothermal synthesis method was used to synthesize spherical CeO2 with regular morphology,uniform particle size,and good dispersibility,which was doped with rare earth elements such as Pr and Y to study the changes in oxygen vacancy formation caused by rare earth doping and the impact of the resulting changes in Ce3+ ratio on polishing performance.According to the Ce3+ content on the material surface,combined with CMP polishing experiments,the results showed that polishing abrasives with high Ce3+ content had better polishing effects on silicon wafers.Among them,Pr-doped CeO2 abrasives had a MRR of up to 445.71 nm/min,and the average roughness Ra of the silicon wafer surface after polishing was 1.23 nm,respectively.Pr doping could change the chemical state of the Ce-based polishing powder surface,thereby affecting the polishing process.By regulating the morphology,particle size,and chemical state of Ce on the surface of cerium oxide,it was possible to achieve a high material removal rate and ensure good surface roughness for silicon wafers in rare earth-doped CeO2 polishing powder.This study could provide theoretical and technical guidance for the development of high-performance cerium oxide-based polishing powder.

Cite this article

YUAN Shuai , FANG Yangfei , YANG Xiangguang , ZHANG Yibo . Study on synthesis of rare earth-doped CeO2 and its CMP properties[J]. Inorganic Chemicals Industry, 2024 , 56(12) : 35 -41 . DOI: 10.19964/j.issn.1006-4990.2024-0164

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