Inorganic Chemicals Industry >
Preparation and photoelectric properties of CuO/BiVO4 heterojunction films
Received date: 2020-01-10
Online published: 2020-07-13
CuO/BiVO4 thin films with nanoporous network structure were prepared on FTO glass by electrochemical deposition.X-ray diffraction（XRD）,Raman spectroscopy（Raman）,scanning electron microscopy（SEM） and energy spectrum analysis（EDS） were used to analyze the composition and structure of the film,and linear voltammetric scanning（LSV） and frequency impedance test（EIS） were used to test the photoelectric properties of the film.The doping of CuO could improve the photoelectric properties of BiVO4 thin films.The photocurrent density of 40 mmol/L CuO/BiVO4 film was 1.39 mA/cm2 at 1.23 Vvs.RHE,which was about twice as high as that of pure BiVO4 film（0.7mA/cm2）.The results showed that the nanoporous network structure improved the light utilization efficiency of the film,and also increased the contact area between the film and electrolyte.The photocurrent density of CuO/BiVO4 thin films was increased by inhibiting the recombination of photogenerated electron-hole pairs after the formation of heterojunction between CuO and BiVO4.
Key words： BiVO4; CuO; electrodeposition; photocurrent
Wei Zhang , Dandan Wang , Zhongqing Tian . Preparation and photoelectric properties of CuO/BiVO4 heterojunction films[J]. Inorganic Chemicals Industry, 2020 , 52(7) : 99 -102 . DOI: 10.11962/1006-4990.2019-0469
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