Inorganic Chemicals Industry >
Effect of adsorption device position on boron and phosphorus removal in polycrystalline silicon
Received date: 2019-09-12
Online published: 2020-03-31
B and P impurtities are the most difficult to remove in polycrystalline silicon production.In order to improve the adsorption effect of the adsorption device for B and P impurities,reduce the impurity content in chlorosilane of polycrystalline silicon raw material and improve the quality of polycrystalline silicon,the rationality of the installation position of the adsorption device in the purification system was analyzed and studied.Through the modification of part of the material pipeline in the purification system,the materials of different components can be absorbed into the same structure of the adsorption device.The adsorption device is in the best working state through debugging.After that,the total impurity content of B and P,adsorption rate and device backwashing frequency after adsorption were compared and analyzed.The results showed that when the adsorption device was installed between the recovery tower and the distillation tower,the adsorption effect was the best,and the adsorption device ran steadily.The determination of the best fit position of the adsorption device in the system improved the adsorption efficiency and stability of the adsorption device,and laid a foundation for the improvement of the quality of polycrystalline silicon.
Key words： polycrystalline silicon; chlorosilane; B and P impurities; adsorption; stability
Yugang He , Fang Wang , Qiang Sun , Xiaowei Zhang , Qinghe Shi , Qiang Fu . Effect of adsorption device position on boron and phosphorus removal in polycrystalline silicon[J]. Inorganic Chemicals Industry, 2020 , 52(3) : 72 -74 . DOI: 10.11962/1006-4990.2019-0249
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