X切铌酸锂晶体铁电畴反转工艺研究
收稿日期: 2024-12-12
网络出版日期: 2025-04-18
基金资助
山东大学齐鲁青年学者项目
Study on ferroelectric domain inversion in X-cut lithium niobate crystals
Received date: 2024-12-12
Online published: 2025-04-18
铌酸锂晶体因其优异的电光、声光、热释电、压电及非线性光学特性，在多个领域具有广泛应用。以X切向铌酸锂晶体为研究对象，系统地开展了外加脉冲电场诱导铁电畴反转的实验研究，重点探讨实验过程中所遇到的工艺上的问题（极化不成功、电极粘附力差、光刻胶难以剥离）及畴反转质量的影响因素。铁电畴反转的成功率及质量受电场强度、极化次数和电极条件等多重因素共同影响。实验结果表明：选择Cr电极和优化磁控溅射功率（20 W）、沉积速率（12 nm/min），可解决电极粘附力弱的问题；使用稀释的二甲基亚砜剥离溶液取代丙酮，成功剥离光刻胶，得到理想电极图案；通过沿Z向施加极化电压，在410 V外加电压和4次重复极化周期下，畴结构反转完全、反转畴质量最好。通过建立优化的工艺参数体系，提升了畴反转的重复性和稳定性，有望推动其在光电器件、声波器件等领域的更广泛应用。
陈宇能 , 唐供宾 , 陈昆峰 , 薛冬峰 . X切铌酸锂晶体铁电畴反转工艺研究[J]. 无机盐工业, 2025 , 57(11) : 31 -35 . DOI: 10.19964/j.issn.1006-4990.2024-0670
Lithium niobate crystals are extensively applied in multiple fields，due to their excellent electro-optic，acousto-optic，pyroelectric，piezoelectric，and nonlinear optical properties.In this study，X-cut lithium niobate crystals were taken as the research object，and an experimental study on ferroelectric domain inversion induced by an external pulsed electric field was systematically carried out.The process issues encountered during the experiment（unsuccessful polarization，poor electrode adhesion，and difficulty in peeling off photoresist） and the factors affecting the quality of domain inversion were extensively discussed.The success rate and quality of ferroelectric domain inversion were jointly affected by multiple factors such as electric field strength，polarization times，and electrode conditions.The experimental results showed that selecting the Cr electrode and optimizing the magnetron sputtering power（20 W） and deposition rate（12 nm/min） solved the problem of weak electrode adhesion.Replacing acetone with a diluted dimethyl sulfoxide（DMSO） stripping solution successfully stripped the photoresist，resulting in an ideal electrode pattern.By applying a polarization voltage along the Z-direction，under an external voltage of 410 V and 4 repeated polarization cycles，the domain structure inversion was complete and the inverted domain quality was the best.By establishing an optimized process parameter system，the repeatability and stability of domain inversion were improved，which was expected to promote its wider application in optoelectronic devices，acoustic wave devices，and other fields.
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