锑掺杂量对ATO薄膜结构及光、电性能的影响

无机盐工业 ›› 2012, Vol. 44 ›› Issue (1): 19-.

锑掺杂量对ATO薄膜结构及光、电性能的影响

杨保平¹，钟小华^1，2，张晓亮²，崔锦峰¹，贾均红²，易戈文²

1．兰州理工大学石油化工学院，甘肃兰州 730050；2．中国科学院兰州化学物理研究所固体润滑国家重点实验室

出版日期:2012-01-10 发布日期:2012-01-16

Effects of Sb doping amount on structure and transmission,electric property of ATO films

Yang Baoping¹,Zhong Xiaohua^{1, 2},Zhang Xiaoliang²,Cui Jinfeng¹,Jia Junhong²,Yi Gewen²

1.School of Petrochemical Technology,Lanzhou University of Technology,
Lanzhou 730050,China;2.State Key Laboratory of Solid Lubrication,Lanzhou Institute of Chemical Physics,Chinese Academy of Sciences

Published:2012-01-10 Online:2012-01-16

摘要/Abstract

摘要： 以四氯化锡和三氯化锑为主要原料，采用溶胶-凝胶法制备了不同锑掺杂量的纳米锑掺杂二氧化锡（ATO）薄膜。分别利用XRD、FESEM、紫外可见分光光度计和四探针电阻仪对晶体结构、薄膜形貌、光透过率和薄膜方块电阻进行表征，考察锑掺杂量对ATO薄膜晶体结构、晶粒尺寸、光透过率和导电性能的影响。结果表明：所制备的ATO薄膜为（110）面择优取向的四方相锡石结构，晶粒尺寸小于26 nm，当锑掺杂量为10%（物质的量分数）时，ATO薄膜具有最小的方块电阻（60.1 Ω/□），可见光透过率大于85%。

关键词: ATO纳米薄膜, Sb掺杂量, sol-gel法, 光透过率, 方块电阻

Abstract: Using sol-gel method and with SnCl₄ and SbCl₃as raw materials,antimony doped tin oxide (ATO) films with different Sb doping amounts were synthesized. Microstructure,film morphology,transmission,and sheet resistance were characterized by XRD,FESEM,UV-visible spectroscopy,and four-probe resistivity/square resistance tester,and the effects of Sb doping amounts on crystalline microstructure,crystal size,transmission,and conductivity properties of the ATO films were investigated systematically.Results showed that the prepared ATO films had tetragonal cassiterite structure and the preferred orientation was observed as (110)plane,the average crystal size was less than 26 nm,and its sheet resistance was obtained to be the lowest 60.1 Ω/□ when the Sb content was 10%(molar fraction),and the transmission was above 85% in the visible light range.

Key words: ATO films, Sb doping amounts, sol-gel method, transmission, sheet resistance

中图分类号:

TQ135.31

杨保平, 钟小华, 张晓亮, 崔锦峰, 贾均红, 易戈文. 锑掺杂量对ATO薄膜结构及光、电性能的影响[J]. 无机盐工业, 2012, 44(1): 19-.

YANG Bao-Ping, ZHONG Xiao-Hua, ZHANG Xiao-Liang, CUI Jin-Feng, JIA Jun-Hong, YI Ge-Wen. Effects of Sb doping amount on structure and transmission,electric property of ATO films[J]. INORGANICCHEMICALSINDUSTRY, 2012, 44(1): 19-.

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锑掺杂量对ATO薄膜结构及光、电性能的影响

Effects of Sb doping amount on structure and transmission,electric property of ATO films

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