无机盐工业
主管:中海油天津化工研究设计院有限公司
主办:中海油天津化工研究设计院有限公司
   中海油炼油化工科学研究院(北京)有限公司
   中国化工学会无机酸碱盐专业委员会
ISSN 1006-4990 CN 12-1069/TQ

无机盐工业 ›› 2024, Vol. 56 ›› Issue (12): 35-41.doi: 10.19964/j.issn.1006-4990.2024-0164

• 高新技术用高纯无机原料 • 上一篇    下一篇

稀土掺杂CeO2的合成及其CMP性能研究

袁帅1,2(), 方杨飞1,2, 杨向光1,2, 张一波1,2()   

  1. 1.中国科学技术大学,安徽 合肥 230026
    2.中国科学院赣江创新研究院,江西 赣州 341100
  • 收稿日期:2024-03-23 出版日期:2024-12-10 发布日期:2024-05-21
  • 通讯作者: 张一波(1985— ),男,博士,研究员,博导,主要研究方向为稀土功能材料、环境催化与大气污染控制;E-mail: yibozhang@gia.cas.cn
  • 作者简介:袁帅(1998— ),男,硕士,主要从事稀土催化材料研究;E-mail: syuan22@gia.cas.cn
  • 基金资助:
    国家自然科学基金项目(22072141);国家自然科学基金项目(22176185);中国科学院青年创新促进会人才项目(2018263);江西省双千计划(青年)项目(jxsq2020101047);江西省杰出青年基金项目(20232ACB213004);中国科学院赣江创新研究院自主部署项目(E355C001);国家重点研发计划项目(2022YFB3504200)

Study on synthesis of rare earth-doped CeO2 and its CMP properties

YUAN Shuai1,2(), FANG Yangfei1,2, YANG Xiangguang1,2, ZHANG Yibo1,2()   

  1. 1.University of Science and Technology of China,Hefei 230026,China
    2.Ganjiang Institute of Innovation,Chinese Academy of Sciences,Ganzhou 341100,China
  • Received:2024-03-23 Published:2024-12-10 Online:2024-05-21

摘要:

CeO2作为一种常用的稀土抛光粉,其抛光性能十分优异,但在现有的抛光研究中,平衡材料去除速率(MRR)和表面粗糙度(Ra)两者的关系一直是重点与难点。为探究这一问题,采用溶剂热法合成形貌规整、粒径较为均一、分散性良好的球形CeO2,并对其进行Pr、Y等稀土元素的掺杂,研究稀土元素掺杂对氧空位形成的改变,以及引起的Ce3+比例的变化对抛光性能的影响。根据材料表面Ce3+的含量,与CMP抛光实验结合,结果显示Ce3+含量较高的抛光磨料对硅片的抛光效果更好,其中Pr掺杂的CeO2磨料,MRR高达445.71 nm/min,抛光后硅片的平均粗糙度(Ra)为1.23 nm,Pr元素的掺杂能够改变Ce基抛光粉表面的化学状态,进而影响抛光过程。通过对氧化铈形貌、粒径及表面Ce的化学状态的调控,稀土元素掺杂后的CeO2抛光粉具有较快的材料去除速率和较好的表面粗糙度,该研究可为开发高性能氧化铈基抛光粉提供一定的理论及技术指导。

关键词: CeO2, 溶剂热法, CMP, 稀土元素掺杂, Ce表面化学状态

Abstract:

CeO2 is a commonly used rare earth polishing powder with excellent polishing performance.However,in its polishing research,balancing material removal rate(MRR) and surface roughness(Ra) has always been a key and difficult point.To explore this issue,the solvothermal synthesis method was used to synthesize spherical CeO2 with regular morphology,uniform particle size,and good dispersibility,which was doped with rare earth elements such as Pr and Y to study the changes in oxygen vacancy formation caused by rare earth doping and the impact of the resulting changes in Ce3+ ratio on polishing performance.According to the Ce3+ content on the material surface,combined with CMP polishing experiments,the results showed that polishing abrasives with high Ce3+ content had better polishing effects on silicon wafers.Among them,Pr-doped CeO2 abrasives had a MRR of up to 445.71 nm/min,and the average roughness Ra of the silicon wafer surface after polishing was 1.23 nm,respectively.Pr doping could change the chemical state of the Ce-based polishing powder surface,thereby affecting the polishing process.By regulating the morphology,particle size,and chemical state of Ce on the surface of cerium oxide,it was possible to achieve a high material removal rate and ensure good surface roughness for silicon wafers in rare earth-doped CeO2 polishing powder.This study could provide theoretical and technical guidance for the development of high-performance cerium oxide-based polishing powder.

Key words: CeO2, solvothermal method, CMP, rare earth element doping, Ce surface chemical state

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